Events Calendar

Fundamentals and Applications of Low-Dimensional Nanoelectronic Heterostructures

This is a past event.

Thursday, February 4, 2016, 4 pm

This is a past event.

Physics Colloquium

Mark C. Hersam
Department of Materials Science and Engineering
Northwestern University

NOTE: The room is changed to Fisher 131.

Abstract: Low-dimensional nanomaterials have emerged as promising candidates for next-generation electronic and optoelectronic applications. As is common for new materials, much of the early work has focused on measuring and optimizing intrinsic properties on small samples (e.g., micromechanically exfoliated flakes) under idealized conditions (e.g., vacuum and/or cryogenic temperature environments). However, real-world devices and systems inevitably require large-area samples that are integrated with dielectrics, contacts, and other semiconductors at standard temperature and pressure conditions. This talk will thus explore methods for improving the uniformity of solution-processed low-dimensional materials with an eye toward realizing scalable processing of large-area thin-films. For example, density gradient ultracentrifugation allows the solution-based isolation of transition metal dichalcogenides (e.g., MoS2, WS2, MoSe2, and WSe2) and boron nitride with homogeneous thickness down to the single-layer level. Similarly, two-dimensional black phosphorus is isolated in solution with the resulting flakes showing electronic performance that is comparable to mechanically exfoliated flakes. In addition to solution processing, this talk will also report on the integration of low-dimensional materials with dielectrics and other semiconductors. In particular, atomic layer deposition of dielectrics on two-dimensional black phosphorus suppresses ambient degradation, thereby preserving electronic properties in atmospheric pressure conditions. Finally, p-type semiconducting carbon nanotube thin films are combined with n-type single-layer MoS2 to form p-n heterojunction diodes. The atomically thin nature of single-layer MoS2 implies that an applied gate bias can electrostatically modulate both sides of the p-n heterojunction concurrently, thereby providing five orders of magnitude gate-tunability over the diode rectification ratio in addition to unprecedented anti-ambipolar behavior when operated as a three-terminal device. 

Professional Biography of Mark C. Hersam 

Mark C. Hersam is the Walter P. Murphy Professor of Materials Science and Engineering and Director of the Materials Research Center at Northwestern University. He earned a B.S. in Electrical Engineering from the University of Illinois at Urbana-Champaign (UIUC) in 1996, M.Phil. in Physics from the University of Cambridge in 1997, and a Ph.D. in Electrical Engineering from UIUC in 2000. His research interests include nanofabrication, scanning probe microscopy, semiconductor surfaces, and nanoelectronic materials. As a faculty member, Dr. Hersam has received several awards including the NSF CAREER, Beckman Young Investigator, ARO Young Investigator, ONR Young Investigator, Sloan Research Fellowship, Presidential Early Career Award for Scientists and Engineers, TMS Robert Lansing Hardy Award, AVS Peter Mark Award, MRS Outstanding Young Investigator, MacArthur Fellowship, and six Teacher of the Year Awards. Dr. Hersam is the co-founder of NanoIntegris, which is a commercial supplier of high performance nanoelectronic materials. Dr. Hersam is a Fellow of MRS, AVS, APS, AAAS, SPIE, and IEEE, and also serves as Associate Editor of ACS Nano.

Additional Details



0 people added

User Activity

No recent activity