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Transition Metal Oxides and Resistive Switching

This is a past event.

Thursday, September 29, 2016, 4 pm

This is a past event.

Physics Colloquium

The next Physics Colloquium will be held at 4 p.m. Thursday (Sept. 29) in Fisher Hall l139. Olle Heinonen will present "Transition Metal Oxides and Resistive Switching."

Resistive switching was discovered some 60 years ago. The basics of resistive switching is that an insulating material, typically an oxide sandwiched between metal electrodes, can be cycled between a high-resistance and low-resistance state. The effect has recently become very interesting for applications in non-volatile random access memories, and there are large industrial efforts aimed at productizing so-called resistive random access memories (RRAMs).

Heinonen received his PhD from Case Western Reserve University working with Phil Taylor on the quantum Hall effect. He joined the Materials Science Division at Argonne National Laboratory in 2010, where he does research in computational materials science, ranging from quantum materials to nanoscale magnetic systems and Co-based superalloys. He has authored some 100 publications, co-authored two textbooks in condensed matter theory, and holds 36 US Patents. 

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